DTMOS IV Efficiency Advantages of Superjunction Transistors

December 11, 2012 // By Toshiba Electronics Europe
Superjunction MOSFETs are able to deliver a combination of high conduction and switching efficiency, small die area and high breakdown voltage that conventional devices cannot achieve. This article explains how superjunction technology delivers these benefits for designers, and examines the latest developments that will enable performance to be further extended in the future.
Toshiba, DTMOS IV Efficiency Advantages of Superjunction Transistors, MOSFETS