IEGT Plus SiC: A Hybrid Approach to Inverter Efficiency and Performance Improvement

July 22, 2014 // By Dr Georges Tchouangue, Toshiba Electronics Europe
Silicon carbide (SiC) devices have the potential to unlock significant performance and efficiency improvements in applications ranging from rail traction to renewable energy generation. This paper describes how the introduction of hybrid technologies that combine these performance and efficiency advantages with the high-power handling capabilities of silicon injection-enhanced gate transistors (IEGTs) is providing engineers with an effective way of significantly reducing losses while minimizing equipment size.
Toshiba Electronics Europe, Power Electronics, IEGT Plus SiC