Power Semiconductor Failure Diagnosis using Thermal Characterization and Power Cycling

January 19, 2015 // By Mentor Graphics
A description of combined use of power cycling with failure analysis via  transient thermal measurement methods to identify onset of material degradation in devices such as IGBTs & MOSFETs. Understanding failure and its development over a lifetime of potential cycles is a must for those companies tasked with delivering reliable performance in demanding applications such as automotive, rail, renewable energy and motion control sectors for power semiconductors.  Learn more in the whitepaper.
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Mentor Graphics, IGBT testing, power testing