2-mm x 2-mm MOSFETs with tin-plated solderable side pads
June 14, 2012 // Paul Buckley
NXP Semiconductors has introduced what the company claims is the industry’s first MOSFETs in a 2-mm x 2-mm low-profile DFN (discrete flat no-leads) package with tin-plated, solderable side pads.
The unique side pads offer the advantage of optical soldering inspection, as well as a better quality of solder connection compared to conventional leadless packages.
Available immediately, the new PMPB11EN and PMPB20EN 30V N-Channel MOSFETs are the first of more than 20 devices housed in the DFN2020MD-6 (SOT1220) package from NXP. Both MOSFETs have a maximum drain current (ID) of >10 A, and very low Rds(on) values of 12 mOhm typ and 16.5 mOhm typ at 10 V respectively for reduced conduction losses, which enable lower power consumption and longer battery life.
Only 0.6 mm in height, the new DFN2020 MOSFETs are also thinner than most 2-mm x 2-mm products on the market today, making them ideal for ultra-small load switches, power converters, and charger switches in portable applications such as smartphones and tablets. The MOSFETs are also well suited for other space-constrained applications including DC motors, server and network communications, as well as LED lighting, where power density and efficiency are critical. Eight times smaller than standard SO8 packages, DFN2020 offers comparable thermal resistance, and can replace many larger MOSFET packages such as SO8, 3x3 or TSSOP8 with the same Rds(on) value range.
The new MOSFETs enhance NXP’s ultra-small leadless MOSFET line-up which will include more than 60 types in 2-mm x 2-mm and 1-mm x 0.6-mm package sizes by the end of this year. NXP is now a major player in low Rds(on) MOSFETs in small sizes, offering both FET and bipolar transistor technologies.
More information about the DFN2020 MOSFETs at
PMPB11EN - Nch 30 V VDS, 20 V VGS, 12 mOhm typ RDSon at 10 V: www.nxp.com/pip/PMPB11EN
PMPB20EN - Nch 30 V VDS, 20 V VGS, 16.5 mOhm typ RDSon at 10 V: www.nxp.com/pip/PMPB20EN
DFN2020MD-6 package at: www.nxp.com/packages/SOT1220.html
When did analog steal digital's mojo?
May 28, 2015
Name two semiconductor companies whose names begin with the letter T that used to mainly make digital ICs but now think analog ...
NXP agrees RF power business sell off
Merck invests 7m euros to open OLED Application Center
Try out Intersil's latest step-down power module
Exploring new dimensions for HMI technology
Smartening up power monitoring
May 28, 2015
A recent survey from Gartner Research reports that in 2014 Microchip Technology was ranked as the top 8-bit and 16-bit MCU ...
R&D centre advances simulation technology for car developers
Xray sensor startup raises funds
IoT is driving an analog opportunity
- Integrating GPS into consumer products
- Controlling LED Lighting Using Triacs and Quadracs
- Automotive Designs Demand Low EMI Synchronous Buck Converters
- Smart Capacitive Design Tips
InterviewCEO interview: What's next after Tower's turn-around?
May 2015 marks the tenth anniversary of Russell Ellwanger taking over as CEO of speciality foundry Tower Semiconductor Ltd. (Migdael Haemek, Israel), which now trades as TowerJazz. And so EE Times Europe ...
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
In this month's reader offer, Analog Devices is giving away five Blackfin Low-Power Imaging Platform (BLIP) Development Systems (ADZS-BF707-BLIP2), worth 199 dollars each, for EETimes Europe's readers to win.
Targeting demanding ultra-low-power, real-time applications for image sensing and advanced audio, the development platform leverages the company’s ADSP-BF707BBCZ-4 Blackfin processor as...MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.