30-V power MOSFET cuts conduction losses
June 07, 2012 // Paul Buckley
Alpha and Omega Semiconductor Limited has released a sub-milliohm, energy efficient, 30V n-channel Power MOSFET housed in a DFN 5 x 6 mm package. The AON6500 enables high performance power switching in industrial motor control and advanced power supply applications.
The device’s ultra-low on-resistance of 0.95 mOhm at 10 VGS makes it an ideal solution for DC/DC conversion, OR’ing MOSFET, and E-fuse safety switching functions required in high end computing, telecom and point-of-load power supply applications.
The AON6500 employs AOS’ proprietary AlphaMOS (aMOS) 30 V technology, which improves RDS(ON) by 40% compared to the previous generation – which significantly reduces power losses in applications. The high performance offered in the compact DFN 5x6 package provides designers the flexibility to optimize performance, space, and cost in their power systems.
AON6500 is in halogen-free DFN5x6 package and is 100% UIS and Rg tested.
Availability and Pricing
The AON6500 is immediately available in production quantities with a lead-time of 12 weeks. The unit price for 1,000 pieces is $0.70.
Visit Alpha and Omega Semiconductor at www.aosmd.com
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