30W DC to 6GHz GaN on SiC RF power transistors
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eeNews Europe
The T1G6003028-FS is constructed with TriQuint’s 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is ideally-suited for military and commercial radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications. The transistors have a linear gain greater than 14dB at 6 GHz and operate from 28V.
Visit Richardson RFPD at the T1G6003028-FS webpage – www.richardsonrfpd.com
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