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500-V n-channel power MOSFET offers improved switching speed

April 01, 2010 // Paul Buckley

500-V n-channel power MOSFET offers improved switching speed

Vishay Intertechnology, Inc., has unveiled a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices.

Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63 ns and Qrr of 114 nC, with an improved gate charge of 34 nC.

The SiHF8N50L-E3's improved reverse recovery characteristics result in better EMI immunity and better efficiency, while avoiding internal body diode recovery failures that cause MOSFET burn-out.

The new MOSFET combines its 500-V rating with a low 1.0-ohm maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in LLC, full-bridge, half-bridge, and double-forward topologies for LIPS inverters, HIDs, PC power supplies, and ballasts.

For reliable operation, the device is 100 percent avalanche tested. Peak current handling is 22 A pulsed and 8 A continuous (limited by maximum junction temperature).  Offered in the TO-220 FULLPAK package, the SiHF8N50L-E3 is compliant to RoHS Directive 2002/95/EC.


Samples and production quantities of the new power MOSFET are available now, with lead times of eight to 10 weeks for larger orders.

Datasheet: SiHF8N50L

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