500-V n-channel power MOSFET offers improved switching speed
April 01, 2010 // Paul Buckley
Vishay Intertechnology, Inc., has unveiled a new 500-V n-channel power MOSFET with improved switching speed and losses compared to previous-generation devices.
Suitable for ZVS topologies, the SiHF8N50L-E3 offers a low trr of 63 ns and Qrr of 114 nC, with an improved gate charge of 34 nC.
The SiHF8N50L-E3's improved reverse recovery characteristics result in better EMI immunity and better efficiency, while avoiding internal body diode recovery failures that cause MOSFET burn-out.
The new MOSFET combines its 500-V rating with a low 1.0-ohm maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in LLC, full-bridge, half-bridge, and double-forward topologies for LIPS inverters, HIDs, PC power supplies, and ballasts.
For reliable operation, the device is 100 percent avalanche tested. Peak current handling is 22 A pulsed and 8 A continuous (limited by maximum junction temperature). Offered in the TO-220 FULLPAK package, the SiHF8N50L-E3 is compliant to RoHS Directive 2002/95/EC.
Samples and production quantities of the new power MOSFET are available now, with lead times of eight to 10 weeks for larger orders.
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This month, Future Electronics has 20 of Intersil's ISL8203MEVAL2Z evaluation boards to give away to EETimes Europe's readers. Worth 95 US dollars, the board was designed to demonstrate the performance of the ISL8203M dual step-down power module which integrates a PWM controller, synchronous switching MOSFETs, inductors, and passives all in a 9.0x6.5x1.83mm package.
The ISL8203M is rated for...MORE INFO AND LAST MONTH' WINNERS...
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