500-V N-channel power MOSFETs offers ultra-low on-resistance and gate charge of 68-nC
October 14, 2010 // Paul Buckley
Vishay Intertechnology, Inc., has released four new 500-V, 16-A n-channel power MOSFETs with ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 68 nC, in the TO-220AB, TO-220 FULLPAK, D≤PAK, and TO-247AC packages.
The low on-resistance of the SiHP16N50C (TO-220AB), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies.
In addition to their low on-resistance, the devices feature a gate charge of 68nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 25.84 Ω-nC. The new n-channel MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation modes. Compared to previous-generation MOSFETs, the SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C also offer faster switching speeds and reduced switching losses.
The devices are compliant to RoHS Directive 2002/95/EC and 100% avalanche tested for reliable operation. Samples and production quantities of the new power MOSFETs are available now, with lead times of eight to 10 weeks for larger orders.
Visit Vishay at www.vishay.com
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