Aixtron GaN-on-Si packet improves HB LED manufacturing productivity
July 26, 2012 // Christoph Hammerschmidt
Semiconductor equipment manufacturer Aixtron has introduced a 5 x 200 mm GaN-on-Si (Gallium Nitride on silicon) technology package for its AIX G5 Planetary Reactor platform. The package could LED manufacturers to significantly increase their productivity.
According to Aixtron marketing vice president Rainer Beccard, GaN-on-Si is a "very promising" option for manufacturers of future low cost High Brightness LEDs. Since wafer size and material play a crucial role when it comes to cost effective manufacturing processes, the transition to 200mm standard silicon wafers will be the "logical next step" on the manufacturing roadmaps, since it offers unique economies of scale. Besides LED manufacturers, the technology could also be interesting for power electronics.
The technology package has been designed with high yield through high process uniformity in mind, the company said. "Uniformity and yield are the key success criteria in 200mm GaN -on-Silicon processes", said Frank Wischmeyer, Power Electronics Program Manager at Aixtron. He added that the equipment provides an extremely stable process. At the same time, the technology package offers compatibility with other Aixtron G5 MOCVD platforms and a high processing capacity.
A feature that ensures the high uniformity is the rotational symmetry processing pattern for all five 200mm wafers processed at the same time. "This uniformity pattern has been an inherent feature of our Planetary Reactor technology", Wischmeyer added.All news
Sensor choices power industrial Internet innovation
May 26, 2015
Whether or not the Internet of Things will live up to its own hype, the notion has certainly got people thinking. Proposals ...
Software collaboration enables software quality compliance
Why NOW is the time to invest in security
eDP: the next rung on display control's evolutionary ladder
Daimler, Qualcomm announce strategic partnership
Researchers create first single-molecule diode
May 26, 2015
A group of researchers at Columbia Engineering claim to be the first to develop a single-molecule diode that performs 50 ...
Rohm buys Renesas wafer fab
SK Hynix, Sharp move up chip vendor ranking
IDT partners EPC to integrate GaN and silicon technologies
- Integrating GPS into consumer products
- Controlling LED Lighting Using Triacs and Quadracs
- Automotive Designs Demand Low EMI Synchronous Buck Converters
- Smart Capacitive Design Tips
InterviewCEO interview: What's next after Tower's turn-around?
May 2015 marks the tenth anniversary of Russell Ellwanger taking over as CEO of speciality foundry Tower Semiconductor Ltd. (Migdael Haemek, Israel), which now trades as TowerJazz. And so EE Times Europe ...
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
In this month's reader offer, Analog Devices is giving away five Blackfin Low-Power Imaging Platform (BLIP) Development Systems (ADZS-BF707-BLIP2), worth 199 dollars each, for EETimes Europe's readers to win.
Targeting demanding ultra-low-power, real-time applications for image sensing and advanced audio, the development platform leverages the company’s ADSP-BF707BBCZ-4 Blackfin processor as...MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.