Floating surge stopper provides unlimited overvoltage protection
Altera to integrate Enpirion power interfaces into its FPGAs
Automation CAN group plans permanent interoperability test capability
Opening up new user-interaction scenarios with Time-of-Flight measurements 
Goepel electronic initiates Cooperation Network with EMS companies
The number of charging stations for electrical vehicles is expected to soar by 20220, study says 
In automotive lighting, LEDs still lacks of horsepower, study says
Ultra-low-power SoC supports world's smallest Bluetooth location stickers 
Imec and Renesas collaborate on ultra-low power short range radios
European Semiconductor Distribution Market shows sequential recovery in Q1/CY13
Omron appoints TME to strengthen presence in Eastern Europe
Avnet Supply Chain Solutions launches RaBET Tool in Europe
sureCore receives £250K SMART Award to prototype its low power SRAM technology
Amantys partners Fuji Electric to launch IGBT gate drivers for wind and solar markets
Cambridge Nanotherm starts mass manufacturing of thermal management substrate
Aixtron GaN-on-Si packet improves HB LED manufacturing productivity
July 26, 2012 // Christoph Hammerschmidt
Semiconductor equipment manufacturer Aixtron has introduced a 5 x 200 mm GaN-on-Si (Gallium Nitride on silicon) technology package for its AIX G5 Planetary Reactor platform. The package could LED manufacturers to significantly increase their productivity.
According to Aixtron marketing vice president Rainer Beccard, GaN-on-Si is a "very promising" option for manufacturers of future low cost High Brightness LEDs. Since wafer size and material play a crucial role when it comes to cost effective manufacturing processes, the transition to 200mm standard silicon wafers will be the "logical next step" on the manufacturing roadmaps, since it offers unique economies of scale. Besides LED manufacturers, the technology could also be interesting for power electronics.
The technology package has been designed with high yield through high process uniformity in mind, the company said. "Uniformity and yield are the key success criteria in 200mm GaN -on-Silicon processes", said Frank Wischmeyer, Power Electronics Program Manager at Aixtron. He added that the equipment provides an extremely stable process. At the same time, the technology package offers compatibility with other Aixtron G5 MOCVD platforms and a high processing capacity.
A feature that ensures the high uniformity is the rotational symmetry processing pattern for all five 200mm wafers processed at the same time. "This uniformity pattern has been an inherent feature of our Planetary Reactor technology", Wischmeyer added.
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Technology News
Floating surge stopper provides unlimited overvoltage protection
May 17, 2013
Protecting sensitive electronic circuitry from voltage transients is an essential part of any system be it automotive, industrial, ...
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Technology News
Altera to integrate Enpirion power interfaces into its FPGAs
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Technology News
Automation CAN group plans permanent interoperability test capability
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Feature Articles
Opening up new user-interaction scenarios with Time-of-Flight measurements
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Technology News
Goepel electronic initiates Cooperation Network with EMS companies
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Market News
The number of charging stations for electrical vehicles is expected to soar by 20220, study says
May 17, 2013
The number of electric vehicle charging stations is set to soar globally by 2020, supporting a shift in driving away from ...
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Market News
In automotive lighting, LEDs still lacks of horsepower, study says
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Technology News
Ultra-low-power SoC supports world's smallest Bluetooth location stickers
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Business News
Imec and Renesas collaborate on ultra-low power short range radios
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Filter Wizard
Check out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
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The development platform for i.MX 6Quad from element14 (built to the Freescale SABRE Lite design) is an evaluation platform featuring the powerful i.MX 6Q, a multimedia application processor with Quad ARM Cortex-A9 cores at 1.2 GHz from Freescale Semiconductor.
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December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.
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