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Aixtron GaN-on-Si packet improves HB LED manufacturing productivity

July 26, 2012 // Christoph Hammerschmidt

Aixtron GaN-on-Si packet improves HB LED manufacturing productivity

Semiconductor equipment manufacturer Aixtron has introduced a 5 x 200 mm GaN-on-Si (Gallium Nitride on silicon) technology package for its AIX G5 Planetary Reactor platform. The package could LED manufacturers to significantly increase their productivity.


According to Aixtron marketing vice president Rainer Beccard, GaN-on-Si is a "very promising" option for manufacturers of future low cost High Brightness LEDs. Since wafer size and material play a crucial role when it comes to cost effective manufacturing processes, the transition to 200mm standard silicon wafers will be the "logical next step" on the manufacturing roadmaps, since it offers unique economies of scale. Besides LED manufacturers, the technology could also be interesting for power electronics. 


The technology package has been designed with high yield through high process uniformity in mind, the company said. "Uniformity and yield are the key success criteria in 200mm GaN -on-Silicon processes", said Frank Wischmeyer, Power Electronics Program Manager at Aixtron. He added that the equipment provides an extremely stable process. At the same time, the technology package offers compatibility with other Aixtron G5 MOCVD platforms and a high processing capacity. 


A feature that ensures the high uniformity is the rotational symmetry processing pattern for all five 200mm wafers processed at the same time. "This uniformity pattern has been an inherent feature of our Planetary Reactor technology", Wischmeyer added.

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