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Dual 20-V P-channel TrenchFET Gen III Power MOSFET offers industry’s lowest on-resistance down to 54-mohms at 4.5-V

February 10, 2011 // Paul Buckley

Dual 20-V P-channel TrenchFET Gen III Power MOSFET offers industry’s lowest on-resistance down to 54-mohms at 4.5-V

Vishay Intertechnology, Inc., has introduced a new dual 20 V p-channel TrenchFET Gen III power MOSFET with an 8 V gate-to-source voltage that claims to feature the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area.


The new SiA923EDJ will be used for dc-to-dc converters, as well as for charger and load switches in handheld devices such as smart phones, MP3 players, tablet PCs, and eBooks. The MOSFET’s lower on-resistance translates into lower conduction losses, saving power and prolonging battery life between charges in these devices.

The SiA923EDJ offers an ultra-low on-resistance of 54 mΩ at 4.5 V, 70 mΩ at 2.5 V, 104 mΩ at 1.8 V, and 165 mΩ at 1.5 V. The closest competing p-channel device with an 8 V gate-to-source rating features on-resistance of 60 mΩ at 4.5 V, 80 mΩ at 2.5 V, 110 mΩ at 1.8 V, and 170 mΩ at 1.5 V. These values are 10 %, 12 %, 5 %, and 3 % higher, respectively, than the SiA923EDJ.

The MOSFET’s on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry. The SiA923EDJ’s low on-resistance also means a lower voltage drop at peak currents to better prevent unwanted undervoltage lockout events. The compact 2 mm by 2 mm PowerPAK SC-70 package is half the size of the TSOP-6, with comparable or better on-resistance and the ability to dissipate 65 % more power under the same ambient conditions.

100 % Rg tested, the SiA923EDJ is halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2500 V.

The SiA923EDJ complements the previously released 20 V SiA921EDJ p-channel MOSFET with a 12 V gate-to-source maximum voltage rating. With the release of the SiA923EDJ, designers can now choose between the higher gate drive voltage of the SiA921EDJ or a device with a lower threshold voltage and lower on-resistance.


Availability


Samples and production quantities of the new SiA923EDJ TrenchFET power MOSFET are available now, with lead times of 14 to 16 weeks for larger orders.

Visit Vishay Intertechnology at www.vishay.com

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