High-efficiency GaN power amplifier on Si substrate supports development of mobile communications base stations
June 22, 2012 // Paul Buckley
Mitsubishi Electric Corporation has developed a prototype high-output, high-efficiency 2 GHz power amplifier for mobile communications base stations.
The amplifier, which features a gallium nitride (GaN) transistor on a silicon (Si) substrate instead of a more costly silicon carbide (SiC), achieves a conversion efficiency rating of 70%, unprecedented among 2 GHz power amplifiers with outputs of 150 W or higher.
The amplifier will help the development of smaller and more power-efficient base station transmitters. The installation of such equipment in tighter spaces will help expand wireless network coverage to accommodate increasing wireless traffic due to smartphone proliferation.
While amplifiers that use GaN transistors consume less power and have a higher output than amplifiers made with silicon transistors, they typically require a more robust substrate made of silicon carbide, which elevates the cost. Initial efforts to develop a GaN transistor using a Si substrate were hampered by deformation between the GaN layer and Si substrate, which led to increased loss and decreased power conversion efficiency. Eventually, however, the company designed a high-performance transistor by optimizing the GaN crystal structure and inserting a buffer layer between the GaN layer and Si substrate.
Mitsubishi Electric’s new GaN power amplifier made with affordable silicon substrate achieves a power conversion efficiency of 70% at 2.1 GHz, largely improving upon the 58% conversion efficiency of Si transistor amplifiers currently available commercially.
Real-time 3D athletes tracking feeds teams with new stats
August 31, 2015
French startup BeSpoon SAS has released a sport edition of its ultra-precise position-tracking system.
Intel Investment spotlights drones’ opportunity for chipmakers
MOSFET failure protection for a single output polyPhase converter
Apple joins Pentagon alliance to develop wearable tech
Single material layer process lowers LED manufacturing costs
Aquion Energy forges technology partnership with Eguana Technologies
August 28, 2015
Aquion Energy Inc., the manufacturer of Aqueous Hybrid Ion (AHI) batteries, and Eguana Technologies a supplier of power conversion ...
The route to cleaner e-cars - coupling perovskite solar cells
Real-time data hub for smart electromobility
Apple iCar: Do iCare?
- Software-Defined Radio Handbook
- Why Making the Move from a Variable Transformer to a VariPLUS is the Right Decision
- Automating Leakage and Functional Testing
- Automotive Circuit Protection using Littelfuse Automotive TVS Diodes
InterviewCEO interview: Ambiq sees broader options for low voltage
Mike Noonen, recently appointed interim CEO at microcontroller startup Ambiq Micro, discusses the focus and opportunities for this pioneering company designing circuits that can operate below the threshold ...
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
This month, Novelda is giving away two full XeThru Inspiration kits worth 1499 US Dollars each, for EETimes Europe's readers to experiment first hand with its XeThru technology.Based on the use of radio waves, rather than infrared, ultrasound or light, the company's X2M1000 Inspiration modules can detect presence just from the chest movement while breathing, and measure both the rate and... MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.