Industry's first 100-V half-bridge gate driver for enhancement-mode GaN power FETs
June 20, 2011 // Paul Buckley
National Semiconductor has introduced what the company claims is the industryís first 100 V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Nationalís LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver designs.
Designers of power bricks and communications infrastructure equipment require high power efficiency in the smallest form factor. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver IC eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.
Meeting the stringent gate drive requirements of enhancement-mode GaN FETs requires multiple discrete devices and significant circuit and PCB design effort. National’s LM5113 fully-integrated enhancement-mode GaN FET driver greatly reduces circuit and PCB design effort and delivers industry-best power density and efficiency.
National’s LM5113 is a 100 V bridge driver for enhancement-mode GaN FETs. Using proprietary technology, the device regulates the high side floating bootstrap capacitor voltage at approximately 5.25 V to optimally drive enhancement-mode GaN power FETs without exceeding the maximum gate-source voltage rating. The LM5113 also features independent sink and source outputs for flexibility of the turn-on strength with respect to the turn-off strength. A low impedance pull down path of 0.5 Ohms provides a fast, reliable turn-off mechanism for the low threshold voltage enhancement-mode GaN power FETs, helping maximize efficiency in high frequency power supply designs. The LM5113 features an integrated high-side bootstrap diode, further minimizing PCB real estate. The LM5113 also provides independent logic inputs for the high-side and low-side drivers, enabling flexibility for use in a variety of both isolated and non-isolated power supply topologies.
National’s LM5113 is offered in a 10-pin 4 mm by 4 mm LLP package and cost $1.65 each in quantities of 1,000. Samples are available now and production quantities will be available in September 2011.
More information the LM5113 half-bridge gate driver about the at
Try out Intersil's latest step-down power module
May 28, 2015
This month, Future Electronics has 20 of Intersilís ISL8203MEVAL2Z evaluation boards to give away to EETimes Europe's readers. ...
Exploring new dimensions for HMI technology
Smartening up power monitoring
R&D centre advances simulation technology for car developers
Xray sensor startup raises funds
IoT is driving an analog opportunity
May 27, 2015
Blaine Bateman tries to quantify the analog opportunity being driven by the Internet of Things revolution.
Implanted biosensor can be wirelessly charged
Pushing emulation beyond functional tests
Sensor choices power industrial Internet innovation
- Integrating GPS into consumer products
- Controlling LED Lighting Using Triacs and Quadracs
- Automotive Designs Demand Low EMI Synchronous Buck Converters
- Smart Capacitive Design Tips
InterviewCEO interview: What's next after Tower's turn-around?
May 2015 marks the tenth anniversary of Russell Ellwanger taking over as CEO of speciality foundry Tower Semiconductor Ltd. (Migdael Haemek, Israel), which now trades as TowerJazz. And so EE Times Europe ...
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
In this month's reader offer, Analog Devices is giving away five Blackfin Low-Power Imaging Platform (BLIP) Development Systems (ADZS-BF707-BLIP2), worth 199 dollars each, for EETimes Europe's readers to win.
Targeting demanding ultra-low-power, real-time applications for image sensing and advanced audio, the development platform leverages the company’s ADSP-BF707BBCZ-4 Blackfin processor as...MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.