Industry's first 100-V half-bridge gate driver for enhancement-mode GaN power FETs
June 20, 2011 // Paul Buckley
National Semiconductor has introduced what the company claims is the industry’s first 100 V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. National’s LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver designs.
Designers of power bricks and communications infrastructure equipment require high power efficiency in the smallest form factor. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver IC eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.
Meeting the stringent gate drive requirements of enhancement-mode GaN FETs requires multiple discrete devices and significant circuit and PCB design effort. National’s LM5113 fully-integrated enhancement-mode GaN FET driver greatly reduces circuit and PCB design effort and delivers industry-best power density and efficiency.
National’s LM5113 is a 100 V bridge driver for enhancement-mode GaN FETs. Using proprietary technology, the device regulates the high side floating bootstrap capacitor voltage at approximately 5.25 V to optimally drive enhancement-mode GaN power FETs without exceeding the maximum gate-source voltage rating. The LM5113 also features independent sink and source outputs for flexibility of the turn-on strength with respect to the turn-off strength. A low impedance pull down path of 0.5 Ohms provides a fast, reliable turn-off mechanism for the low threshold voltage enhancement-mode GaN power FETs, helping maximize efficiency in high frequency power supply designs. The LM5113 features an integrated high-side bootstrap diode, further minimizing PCB real estate. The LM5113 also provides independent logic inputs for the high-side and low-side drivers, enabling flexibility for use in a variety of both isolated and non-isolated power supply topologies.
National’s LM5113 is offered in a 10-pin 4 mm by 4 mm LLP package and cost $1.65 each in quantities of 1,000. Samples are available now and production quantities will be available in September 2011.
More information the LM5113 half-bridge gate driver about the at
RS Components and Allied Electronics connect with Rosenberger for global distribution
October 24, 2014
RS Components (RS) and Allied Electronics, the trading brands of Electrocomponents plc, have signed a global distribution ...
Pixel chip sparks energy-efficient intelligent LED headlamps
Noise cancellation: The sounds of silence in the car
HPLEDs double light output, cut costs by 40 percent
Startup creates virtual cores
Photochemical compounds for tunable OLED devices
October 24, 2014
Spanish researchers have developed new organic compounds characterized by a higher modularity, stability and efficiency, ...
Consumer chips in the car? Experts demand adequate design processes
Murata cheerleaders demonstrate sensors, swarm intelligence
Radon and VOCs detection goes personal
- 5 Best Practices for Designing Flexible Test Stations
- Intelligent PLCs Expand the Internet of Things
- Solutions for Millimeter Wave Wireless Backhaul
- Enter Linduino
InterviewCEO interview: AMS' Laney on driving a sensor-driven business
Kirk Laney, CEO of Austrian mixed-signal chip and sensor company AMS, wants to leverage the opportunity that technology affords to create new markets for sensors and sensor interfaces.
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
This month, Oscium is giving away three of its iMSO-204L dual analogue iOS oscilloscopes, worth USD400 each. Designed with native Lightning compatibility, the iMSO-204L transforms the iPad, iPhone, and iPod touch into an ultra-portable, two-channel oscilloscope.
Since Apple changed its connector, Oscium has been working to bring native compatibility to its customers. The third generation...MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.