Intel tips 22-nm tri-gate, but mobile is MIA
May 05, 2011 // Mark LaPedus
As expected, Intel Corp., rolled out its 22-nm process—with a twist. The chip giant introduced the process, based on its long-awaited 3-D transistor design, dubbed tri-gate. First disclosed by Intel in 2002, the tri-gate transistor will form the basis of its 22-nm node. Intel also demonstrated the world's first 22-nm microprocessor, codenamed Ivy Bridge.
But missing from the announcement was a 22-nm mobile processor, which could fend off competitive threats from the ARM camp.
Intel's 22-nm process will also be based on Intel's third-generation high-k/metal-gate scheme. It will also use copper interconnects, strain silicon and other features. Like 32-nm, Intel will make use of 193-nm immersion lithography.
Intel did not disclose any details about the low-k interconnect technology. Intel insists that it will not use silicon-on-insulator (SOI) technology. SOI wafers will add about 10 percent to total process cost, according to Intel.
The tri-gate transistor represents a major shift in the IC industry. For decades, the industry has used the traditional "flat" two-dimensional planar gate. Intel seeks to replace the planar gate with a thin three-dimensional silicon fin that rises up vertically from the silicon substrate.
Other leading-edge chip makers are looking at multi-gate transistor structures, including IBMs fab club, TSMC, among others. The tri-gate transistor technology is known outside Intel as a FinFET. One company, TSMC, plans to roll out its initial FinFETs at the 14-nm node.
In any case, Intel will have at least a ''three year lead in the multi-gate transistor race, said Mark Bohr, an Intel senior fellow and director of process architecture and integration, at a press event here. Bohr said the tri-gate technology can scale to the 14-nm node, but he stopped short of talking about the next node after 22-nm. All news
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