IQE expands wafer range to include GeOI
July 06, 2009 //
Engineers at IQE's Cardiff, Wales-based silicon epitaxy facility have developed new manufacturing techniques to overcome long-standing challenges to produce high crystal grade Germanium on Insulator (GeOI) material with extremely high crystalline quality.
LONDON Engineers at IQE's Cardiff, Wales-based silicon epitaxy facility have developed new manufacturing techniques to overcome long-standing challenges to produce high crystal grade Germanium on Insulator (GeOI) material with extremely high crystalline quality.
The substrates are the latest addition to IQE's ever widening portfolio of wafer products that allow device designers to look beyond the performance constraints imposed by existing silicon technologies.
"IQE already offers the broadest range of engineered wafer products and this addition of high-mobility GeOI material for next-generation processor, memory, MEMs and solar applications, shows our commitment to ensuring that our customers maintain their competitive advantage through rapid access to leading-edge technology solutions," said Ali Hoy, Sales and Business Development Manager for IQE's electronics products, in a statement.
IQE is initially offering GeOI development kits in 4 inch (100mm) and 6 inch (150mm) diameter wafer sizes, with 8 inch (200mm) wafers scheduled by the end of the year.
IQE operates six manufacturing facilities for its bespoke semiconductor wafers, located in Cardiff (two) and Milton Keynes in the UK; in Bethlehem, Pennsylvania and Somerset, New Jersey in the USA; and Singapore.
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