Low-power, low-distortion RF to IF mixers
December 16, 2011 // Paul Buckley
Integrated Device Technology, Inc., has expanded the company’s analog wireless infrastructure portfolio with two low-power, low-distortion radio frequency (RF) to intermediate frequency (IF) mixers for cellular base station equipment. The new devices improve system third-order intermodulation (IM3) performance and reduce power consumption, resulting in improved quality of service (QoS) and enabling smaller enclosures with increased reliability in 4G wireless infrastructure applications.
The IDT F1150 and F1152 are low-power, low-distortion dual 1700 to 2200 MHz RF to IF mixers with ultra linear (+42 dBm) third-order intercept point (IP3O) for superb intermodulation rejection, making them ideal for multi-carrier, multi-mode cellular systems found in 4G wireless base stations.
The mixers reduce power consumption by over 40 percent versus standard mixers, significantly reducing heat dissipation and easing heat-sinking requirements on the radio card – a critical factor for today’s densely packed enclosures. In addition, the devices improve IM3 distortion by over 15 dB for better signal-to-noise ratio (SNR), allowing customers to improve performance with a higher front-end gain.
The IDT F1150 and F1152 complement the recently announced IDT F1200 low-noise digitally controlled IF variable gain amplifier (VGA) in IDT’s growing portfolio of RF signal path products.
The IDT F1150 (high-side injection) and F1152 (low-side injection) are currently sampling to qualified customers and are available in a 36-pin 6x6 mm QFN package.
For further information: www.IDT.com.
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December 15, 2011 | Texas instruments | 222901974
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