Nanotechnology switches back to vacuum transistors at low voltage
July 03, 2012 // Peter Clarke
Researchers at the University of Pittsburgh have come up with a device structure that allows a switch back to vacuum, in contrast to the solid-state, as the medium for electron transport in transistors.
The team is proposing a MOS vertical structure with a triple layer of metal/silicon dioxide/silicon exposed on the side by a deep trench. The metal and silicon layers form the anode and cathode of the device, separated by the insulating silicon dioxide, and the electron transport occurs in the vertical direction through the vacuum.
The work is discussed in a research paper entitled Metal-oxide-semiconductor field effect transistor with a vacuum channel, published in Nature Nanotechnology July 1.
The work represents a return to the roots of electronics. The solid-state transistor was invented in 1947 as a replacement for the bulky, unreliable vacuum tube. Vacuum tube style electronics in miniature made using solid-state semiconductor manufacturing techniques have been tried before, but the concept has struggled to overcome requirements for high voltage and issue of compatibility with the incumbent solid-state CMOS technology.
A team under Hong Koo Kim, principal investigator on the project and a Professor in the University of Pittsburgh's Swanson School of Engineering, has redesigned the structure of the vacuum electronic device. With the assistance of PhD candidate Siwapon Srisonphan and postdoctoral fellow Yun Suk Jung Kim and his team discovered that electrons trapped inside a semiconductor at the interface with an oxide or metal layer can be easily extracted out into the air. The electrons at the material interface form a sheet of charges, a two-dimensional electron gas and Kim found that the Coulombic repulsion of the electrons for each other enables the easy emission of electrons out of the silicon.
This allows the creation of a low-voltage device in which the electrons travel ballistically in air in a nanometer-scale channel without any collisions or scattering.
The channel length is of the order of 20-nm and the team measured a transconductance of 20-nS per micron and an on/off ratio of 500 and turn-on gate voltage of 0.5-V under ambient conditions, according to the paper's abstract.
"The emission of this electron system into vacuum channels could enable a new class of low-power, high-speed transistors, and it's also compatible with current silicon electronics, complementing those electronics by adding new functions that are faster and more energy efficient due to the low voltage," said Professor Kim, in a statement.
Nature Nanotechnology article
ARM acquires Geomerics and strengthens its position in the visual computing and graphics industries
December 13, 2013
ARM announced the acquisition of Geomerics, a leader in lighting technology for the gaming and entertainment industries. ...
Workflow enables fast, cost-effective simulation of electric drives
Soitec partners IntelliEPI to provide reliable second source in GaAs market
Meyer Burger Technology Group delivers a printing process to mass produce solar cells
"Future automotive applications need incredibly more computing power"
LCD TV technology evolution to see bright moves despite decline in global LCD TV shipments
December 12, 2013
The 2013 global LCD TV shipment declined 1.7% to 203.1 million units due to the sluggish global economic recovery and China’s ...
European BLIM4SME project aims to further streamline Bluetooth Low Energy integration
Additive photolithographic process yields micro flex circuits with 5µm feature resolution
Flexible haptics and capacitive touch combo solution enables more intuitive interfaces
- UltraCMOS® Semiconductor Technology Platforms: A Rapid Advancement of Process & Manufacturing
- Managing Electrical Complexity with a Platform Level Approach and Systems Engineering
- 3mm × 3mm QFN IC Directly Monitors 0V to 80V Supplies
- Adaptive Cell Converter Topology Enables Constant Efficiency in PFC Applications
Interview"Future automotive applications need incredibly more computing power"
These days, the Autosar (Automotive Open System Architecture) development partnership celebrates its tenth anniversary. Launched with the goal to reduce the complexity of the heterogeneous software landscape ...
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
Internet of Things (IoT) manufacturer Ciseco has launched the Raspberry Pi ‘Wireless Inventors Kit’ (RasWIK), featuring 88 pieces to provide everything a Pi owner needs to follow a series of step-by-step projects or to create their own wireless devices, without the need for configuration or even writing code.
RasWIK has been designed to be highly accessible, demystifying the dark art of wireless and enabling anyone with basic computing skills to begin building wireless devices with a Raspberry Pi. You can create anything from a simple traffic light, to a battery monitor, or even a temperature gauge that sends data to the Xively IoT cloud so billions can access the data.This month, Ciseco is giving away twelve Raspberry Pi Wireless Inventors kits, worth £49.99 each for EETimes Europe's readers to win.
And the winners are...
In our previous reader offer, Farsens was giving away five kits for EEtimes Europe readers to evaluate its FenixVortex, Kineo and X1 wireless, battery free sensor tags.
Lucky winners include Mr A. Neil from the UK, Mr. E. Delvaux from Belgium, Mr Lengal from the Czech Republic, Mr H. Bijlsma from the Netherlands, and Mr G. Pfaff from Germany. All should be receiving their packages soon. Lets wish them some interesting findings with their projects.
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.