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ON Semiconductor expands serial EEPROM portfolio to 1Mb

June 24, 2011 // Julien Happich

ON Semiconductor expands serial EEPROM portfolio to 1Mb

ON Semiconductor's latest EEPROM devices include the high density 512 kilobit CAT24C512 and 1 megabit CAT24M01, which have a 1.8 to 5.5V supply voltage range. The CAT24C512 and CAT24M01 employ 256 byte and 128 byte page write buffers respectively. Both devices support standard 100 kHz, fast 400 kHz, and fast-plus 1 MHz serial I2C protocols. These devices are manufactured on a 0.18 µm low power CMOS process at the company’s owned and operated Gresham, Oregon facility.

In addition, the manufacturer introduced a series of AEC-Q100 qualified EEPROMs for automotive designs. These devices have a 2.5 V to 5.5 V supply voltage range and support the standard and fast I2C protocols. Both the 64 kb CAV24C64 and the 32 kb CAV24C32 feature 32 byte page write buffers, while the 2 kb CAV24C02, 4 kb CAV24C04, 8 kb CAV24C08 and 16 kb CAV24C16 incorporate a 16 byte page write buffer. These devices are manufactured on a 0.35 µm process. All of the new EEPROMs feature a 100 year data retention period and support for 1,000,000 program/erase cycles. The operating temperature range of these serial EEPROMs is -40 to +125 °C. The CAT24C512 and CAT24M01 are available in Pb-free, RoHS compliant SOIC-8, TSSOP-8 and PDIP-8 packages.

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