ON Semiconductor introduces high efficiency wireless charging ICs
March 21, 2012 // Paul Buckley
ON Semiconductor has released the NMLU1210, an innovative power MOSFET integrated circuit (IC) for wireless charging applications in portable products such as cell phones, media tablets, portable media players, digital still cameras and GPS units.
The NMLU1210 is a 20 V N-channel full bridge semi-synchronous rectifier, that incorporates a dual Schottky barrier diode supporting up to 3.2 A operation plus two MOSFETs with a 17 mΩ (typical) Rds (ON) to minimize conduction losses and substantially increase efficiency of the charging system.
Wireless inductive charging is becoming increasingly popular, freeing consumers from the inconvenience of the traditional wired approach. It works on the principle of an electromagnetic field being created for the rapid transfer of energy between the transmitter (in the charging station) and the receiver (in the portable device). The NMLU1210 is used by the receiver side to convert AC voltage generated by the transmitter to DC voltage used for battery charging. Offered in an ultra-low inductance thermally efficient package, it is optimized specifically for power management tasks in portable electronic products. This compact IC is highly suited to use in space-constrained environments. It has an operational junction temperature of −55 to 125 ⁰C.
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