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P-channel MOSFET offers increased power efficiency in space-critical applications

November 09, 2011 // Paul Buckley

P-channel MOSFET offers increased power efficiency in space-critical applications

Helping to increase battery efficiency and reduce board space, the miniature DMP1245UFCL 12V P-channel enhancement mode MOSFET from Diodes Incorporated has been introduced to meet the requirements of designers of space-starved portable products including smartphones and tablet computers.

The MOSFET is provided in the ultra compact and thermally efficient DFN1616 package and is characterized by a low RDS(on) that ensures conduction losses are kept to a minimum, thereby increasing battery life.  For example, at 29 mΩ at VGS of 4.5 V the MOSFET’s on-resistance performance is 15% better than that of its closest rival, benefitting battery disconnect and general load-switching applications.

The DFN1616 has a typical off-board profile of 0.5 mm, making it 20% thinner than competitor equivalents, and occupies a PCB area of just 2.56 mm2, 55% of that occupied by alternative larger 2 mm by 2 mm packages.

DMP1245UFCL also offers users the advantage of an increase in protection against ESD.  With gate protection specified at 3 kV, 50% higher than nearest equivalents, the MOSFET is highly resistant to the effects of human-borne ESD.

The miniature DMP1245UFCL 12V P-channel MOSFET from Diodes Incorporated is priced at $0.15 each in 3k quantities.  

Visit Diodes at

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