Power MOSFET is integrated with RF gate driver in a half-bridge topology
May 28, 2012 // Paul Buckley
Microsemi Corporation has strengthened the company's RF power product line with the introduction of the DRF1400 power MOSFET.
The device is well-suited for use in RF generators for a wide range of industrial, scientific and medical (ISM) applications including plasma generation for semiconductors, LCD and solar cell manufacturing, and CO2 lasers operating up to 30 MHz.
Microsemi's DRF family of products integrates RF gate drivers, power MOSFETs and associated bypass capacitors in a single highly thermal performance package. The DRF1400 is a half-bridge topology and it is the first device of its type in the company's DRF family to deliver efficiency of greater than 92 percent at 1 kW. In addition, the low parasitic capacitance and inductance, coupled with the Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin, provide improved stability and control in kW to multi-kilowatt, high frequency ISM applications. The high level of integration also allows the product to reduce bill-of-material component counts and costs.
Integrated RF drivers support a simplified driver stage design, allowing simple logic signals at input. Internal bypass capacitors offer reduced parasitic inductance and most stable supply voltages. Featuring high breakdown voltage (500 V) MOSFETs the device enables higher power output per half-bridge. The high thermal performance proprietary package is capable of delivering up to 1.4 kW of power.
Engineering samples of the DRF1400 are available now. An associated DRF1400 reference design kit (13.56 MHz, Class-D half bridge) is also available for purchase from Microsemi. The reference design includes all of the necessary hardware to quickly launch >1kW of RF power. A design guide is also available (www.microsemi.com/en/sites/default/files/datasheets/1817%20B.pdf) which covers the basics of operation and design consideration for RF system designers.
More information about the DRF1400 power MOSFET at
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