PowerTrench MOSFET offers up to 40 percent space savings and increased efficiency
December 13, 2011 // Paul Buckley
Fairchild Semiconductor has developed the FDMB2307NZ PowerTrench MOSFET to provide designers of mobile products with the increased efficiency needed in a form factor that significantly reduces design space.
Designed specifically for Li-Ion battery pack protection circuits and other ultraportable applications, the FDMB2307NZ features dual N-channel common drain MOSFETs, enabling bidirectional current flow.
By using advanced PowerTrench processes, the FDMB2307NZ provides high power density and a maximum Rss(on) of 16.5 mΩ at VGS = 4.5 V, ID = 8 A, resulting in lower conduction losses, lower voltage drop, less power dissipation and increased overall design efficiency when compared to competitive solutions. The FDMB2307NZ also provides excellent thermal performance, resulting in cooler system operation, further increasing efficiency.
The device’s 2x3 mm2 MicroFET package provides designers with one of the smallest MLP solutions available — 40 percent smaller than existing legacy solutions — saving board space in their design. RoHS-compliant, the device also provides HBM ESD protection >2 kV.
For further informatiuon: www.fairchildsemi.com.
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December 15, 2011 | Texas instruments | 222901974
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