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Protect IGBTs by Sensing Current Using Optical Isolation Amplifi ers

May 16, 2012 // Hong Lei Chen, Avago Technologies // 0 comments

Protect IGBTs by Sensing Current Using Optical Isolation Amplifi ers Download White Paper 151Ko

Insulated-gate bipolar transistors (IGBTs) require full protection to avoid damage and failures resulting from conditions such as short circuits, overloads and overvoltages. The protection is key to ensuring safe and stable power-converter operations in applications such as motor drives and solar and wind power generation systems. To detect over-current and overload conditions, isolation amplifiers featuring fast response or fast fault feedback can be used on the output phases and the DC bus.


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This month, Future Electronics has 20 of Intersil's ISL8203MEVAL2Z evaluation boards to give away to EETimes Europe's readers. Worth 95 US dollars, the board was designed to demonstrate the performance of the ISL8203M dual step-down power module which integrates a PWM controller, synchronous switching MOSFETs, inductors, and passives all in a 9.0x6.5x1.83mm package.

The ISL8203M is rated for dual 3A output current or 6A current sharing operation with an input range of 2.85V to 6V. Each of the two channels employs the current mode pulse width modulation scheme for fast transient response and pulse-by-pulse current limiting.

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