Sixth generation 600-V IGBTs claims hard switching efficiency benefits
November 20, 2012 // Paul Buckley
Toshiba Electronics Europe (TEE) has unveiled a sixth generation IGBT technology that offers improved switching loss/conduction loss trade-off for increased efficiency and improved performance.
The new technology is the basis for a new family of compact 600 V devices that will suit a variety of hard switching applications including motor drives, solar inverters and uninterruptible power supplies (UPS).
Toshiba’s sixth generation IGBT technology combines a finer pattern design and a thinner ‘punch through’ wafer process than the previous generation, as well as a highly optimised vertical design. As a result, devices based around the new process are able to provide lower VCE(sat) conduction losses and reduced Eon and Eoff switching losses.
New products featuring the sixth generation technology offer current ratings of 15 A (GT15J341), 20 A (GT20J341), 30 A (GT30J341) and 50 A (GT50J342). Each of the parts integrates both the IGBT and a fast reverse recovery diode connected between emitter and collector, in a single, compact package. All feature a typical VCE(sat) of 1.5 V at the nominal current. The 15 A and 20 A parts are supplied in a isolated TO-220SIS package, while the 30 A and 50 A devices are available in an non-isolated TO-3P(N) (TO-247 equivalent) package.
The efficiency and performance improvements offered by the new devices can be seen for example by comparing the GT50J342 50 A device and the GT30J341 30 A device with their predecessors. At TC=150°C with a current of 50 A the GT50J342 provides a reduction in VCE(sat) of 32% and respective reductions in Eon and Eoff of 13% and 26%. This reduces overall losses by 24% (DC bus voltage 300 V and IGBT switching frequency of 20 KHz). At TC=150°C with a current of 30 A the GT30J341 provides a reduction in VCE(sat) of 30% and respective reductions in Eon and Eoff of 12% and 33%. This reduces overall losses by 26% (DC bus voltage 300 V and IGBT switching frequency of 20KHz).
Visit Toshiba at www.toshiba-components.com
Smart buildings, smartphones will drive IR detector market
November 26, 2015
The infrared detector market was worth $209 million in 2014 with 247 million units shipped, and is rising to a value of about ...
Private ID as a service leverages smartphone-enabled biometrics
Like Micron, SK Hynix rejects Chinese advances
NXP, Freescale merger clears FTC hurdle
Thin film micro-lenses stretch to focus
German battery maker puts squeeze on Tesla's solar storage plans
November 26, 2015
German battery maker Sonnenbatterie has launched a scheme to connect households with solar panels and other consumers to ...
Report: Abu Dhabi holding talks over GloFo sale
InvenSense to add PUF security to sensors
Flexible sensor detects multiple ions in fluids
- Battery Size Matters
- Software-Defined Radio Handbook - 11th edition
- Multichemistry Buck Battery Charger Controller
- Automotive Circuit Protection using Littelfuse Automotive TVS Diodes
InterviewCEO interview: InvenSense's Abdi on expanding MEMS horizons
InvenSense Inc. is a MEMS company that has epitomized a fabless approach to a sector that is still highly reliant on a thorough grasp of the manufacturing and packaging processes. We interviewed CEO Behrooz ...
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
This month, FTDI Chip is giving away six MCU development board packages complete with a dedicated compiler (including a full integrated development environment).
Worth Euro 315 each, the packages include a credit card sized Clicker 2 board for the FT90X 32-bit MCU supplied alongside a powerful dedicated compiler from MikroElektronika.
MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.