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SOT-883L packaged N-channel and P-channel MOSFETs offer energy efficient benefits

August 10, 2010 // Paul Buckley

SOT-883L packaged N-channel and P-channel MOSFETs offer energy efficient benefits

Central Semiconductor Corp., has unveiled the CEDM7001 (N-Channel) and complementary CEDM8001 (P-Channel) 20 V, 100 mA MOSFETs packaged in the ultra miniature, low profile SOT-883L surface mount case.

The devices have a rated continuous drain current of 100 mA and a peak drain current of 200 mA (tp<10 µs). Both devices have an outstanding low minimum gate threshold voltage of 0.6 V and rDS(ON) of 3.0 Ω (CEDM7001) and 8.0 Ω (CEDM8001). The CEDM7001 and CEDM8001 are the ideal solutions for design engineers seeking energy efficient MOSFETs in a miniature package.

The SOT-883L package uses a board space area of only 0.6 sq mm and has a maximum profile of 0.4mm. Designed to solve space constrained circuit layouts, these MOSFETs are ideal for the latest portable electronic products such as cellular phones, MP3 players, Bluetooth headsets, glucose blood analyzers, and hearing aids. Applications for these devices include DC to DC conversion, load switching, battery charging, and boost switching.

Availability and Pricing

Pricing starts at 0.12 US Dollars each for the CEDM7001 and 0.16 US Dollars each for the CEDM8001 for 8,000 pieces on tape and reel. Sample devices are available upon request.

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