ST, Intel delayed phase-change memory to make improvements
February 12, 2008 //
Researchers from Intel and STMicroelectronics could have produced samples of 128-Mbit phase-change memories in 90-nm process technology as early as June 2007 but opted instead to take time to improve the memory, according to Paolo Cappelletti, group vice president for advanced technology development at ST's flash memory group.
LONDON Researchers from Intel and STMicroelectronics could have produced samples of 128-Mbit phase-change memories in 90-nm process technology as early as June 2007 but opted instead to take time to improve the memory, according to Paolo Cappelletti, group vice president for advanced technology development at ST's flash memory group.
In March 2007 Intel organized a teleconference in which Ed Doller, then chief technology officer of the flash memory group at Intel, told listeners that Intel was preparing to sample a 90-nm 128-Mbit phase change memory to customers in the first half of 2007. Doller said at the time that he was hopeful the memory would go into volume production by the end of the 2007.
The phase-change memory is based on a thermally-induced reversible change in a chalcogenide material - between an amorphous and crystalline state. The 128-Mbit device has been designed as a pin-compatible NOR replacement that provides fast read and write speeds at lower power than conventional flash, and allows for the bit alterability normally seen in RAM.
Capelletti told EE Times that the 90-nm nonvolatile phase-change memory was delayed from that original prediction to help build a better foundation for a memory product at a more advanced manufacturing node.
During the first half of 2007 engineers working on the follow-on to the 90-nm phase-change memory at an ST pilot line in Agrate, Italy, made some changes to the memory cell to improve integration, said Cappelletti. "We saved one critical mask, made the memory cell more scalable and changed the electrical distribution across the array."
"We were not yet in production so we decided to reproduce these changes in 90-nm," said Cappelletti. He added that the decision was done to allow an easier transition from the 128-Mbit 90-nm memory to the next-generation. Cappelletti said he could not say whether that would be implemented in a 65-nm process.
"We were able to produce the 90-nm sample in Q4 2007. The shipment happened in Q1 because we wanted to tie three events together * the delivery of samples; the ISSCC paper on multilevel cell PCM and the demonstration in Barcelona," Cappelletti said.
The reference to Barcelona is believed to be a demonstration of the use of phase-change memory as a replacement for NOR flash memory within a mobile phone.
Averna consolidates US position with Cal-Bay Systems acquisition
September 12, 2014
A developer of test solutions and services for communications and electronics device-makers worldwide, Averna has acquired ...
Market for dimensional metrology faces growth spurt
EUV not needed at 10 or 7nm, says Intel
Li-ion batteries: new material multiplies charging capability
Connected EVs drive further, project finds
EE Times' annual salary & opinion survey report
September 12, 2014
No matter what you call it, EE Times' Annual Salary & Opinion Survey is all about the money. If you didn't get a chance to ...
MIPS-core PICs gain development support under Multi IDE from Green Hills
Free circuit-prototyping service supports advanced thermal management technology
BioSolar partners UCSB to develop a low-cost supercapacitor
- Flexible and Low Power Driving of Solenoid Coils
- How to Protect & Monetize Android Apps
- Power Modules: The New Super Power
- Flexible Performance for Network Security Appliances
InterviewCEO interview: AMS' Laney on driving a sensor-driven business
Kirk Laney, CEO of Austrian mixed-signal chip and sensor company AMS, wants to leverage the opportunity that technology affords to create new markets for sensors and sensor interfaces.
Filter WizardCheck out the Filter Wizard Series of articles by Filter Guru Kendall Castor-Perry which provide invaluable practical Analog Design guidelines.
Linear video channel
READER OFFERRead more
This month, Trinamic Motion Control is offering you to win one of four TMCM-1043 development kits for its highly integrated, NEMA 17-compatible TMCM-1043 stepDancer stepper motor module.
Offering designers an easy-to-use PC-based GUI that allows one-click modification of motor drive current, micro-stepping and other key parameters, the intuitive kits are custom designed and developed for...MORE INFO AND LAST MONTH' WINNERS...
December 15, 2011 | Texas instruments | 222901974
Unique Ser/Des technology supports encrypted video and audio content with full duplex bi-directional control channel over a single wire interface.