TriQuint rolls new GaAs foundry process
September 23, 2010 // Mark LaPedus
RF chip maker TriQuint Semiconductor Inc. has released its latest 150-mm gallium arsenide (GaAs) commercial foundry process. The process, dubbed TQP15, is targeted at the Ka-band segment. It is designed for† building millimeter wave (mmWave) MMICs for applications such as VSAT, satellite communications and point to point radios.
Manufactured in TriQuint's GaAs fabrication facility in Hillsboro, Ore., TQP15 is the latest offering in TriQuint's pseudomorphic high electron mobility transistor (pHEMT) process portfolio.
TQP15 utilizes optical lithography to reduce cost, compared to traditional e-beam based solutions. It also incorporates refractory gate metal architecture which does not exhibit the standard metal gate sinking failure mechanism of non-refractory gate pHEMT processes.
“The TQP15 process leverages TriQuint's mature manufacturing capabilities used in the production of millions of pHEMT-based wafers,” said Steve Grant, vice president of global operations at TriQuint, in a statement.
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