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Ultra-low IR Schottky barrier diodes prevent thermal runaway at high temperatures

August 13, 2012 // Julien Happich

Ultra-low IR Schottky barrier diodes prevent thermal runaway at high temperatures

The RBxx8 series of ultra-low reverse current Schottky barrier diodes from Rohm Semiconductor are capable of operating at high temperatures for use in automotive and power supply devices.


Power consumption is said to be reduced by approximately 40% compared to conventional automotive rectifier diodes, making these devices suitable for energy-saving circuits in electric vehicles (EVs) and hybrid electric vehicles (HEVs).

Rectifier and fast recovery diodes (FRDs) are commonly used in circuits for automotive and power supplies exposed to high temperature environments due their strength against thermal runaway. However, they often feature high VF, making it difficult to reduce power consumption to the levels required for EVs and HEVs. As a result, there has been an increasing demand for low- VF (Forward Voltage) Schottky barrier diodes that can support operation at high temperatures.

Rohm has used high temperature-resistant metals to achieve what the company believes to be the industry's lowest reverse current – approximately 100 times smaller than that of conventional SBDs, ensuring compatibility with high temperature environments.


Visit ROHM Semiconductor at www.rohm.com/eu

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