25A, 650V rated SiC power MOSFETs operate up to +225°C

June 22, 2016 // By Julien Happich
TT Electronics has launched a Silicon Carbide (SiC) power MOSFET designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C, making it suitable for use in close proximity to a combustion engine.

Supplied in a high power dissipation, low thermal resistance, fully hermetic, ceramic SMD1 package the 25A, 650V rated SML25SCM650N2B also ensures faster switching and low switching losses in comparison to normal Si type MOSFETs, consequently the size of the passive components in the circuit can be reduced resulting in weight and space saving benefits. The N-channel MOSFET features a total power dissipation of 90W at a TJ temperature of 25 degrees. A range of screening options are available.
Visit TT Electronics at www.ttelectronics.com