30W DC to 6GHz GaN on SiC RF power transistors

October 25, 2012 // By Julien Happich
Richardson RFPD is now stocking and offering full design support capabilities for a new 30-watt (P3dB), DC to 6 GHz, discrete GaN on SiC high electron mobility transistor (HEMT) from TriQuint Semiconductor.

The T1G6003028-FS is constructed with TriQuint's 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is ideally-suited for military and commercial radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications. The transistors have a linear gain greater than 14dB at 6 GHz and operate from 28V.

Visit Richardson RFPD at the T1G6003028-FS webpage - www.richardsonrfpd.com