Through an advanced package and silicon combination, the FDMS86500L provides lower RDS(ON) (2.5 mΩ at VGS = 10 V, ID = 25 A), enabling lower conduction losses in an industry-standard 5 mm x 6 mm Power 56 package.
Additionally, the FDMS86500L, using shielded-gate MOSFET technology, provides very low switching losses (Qgd 14.6 nC typical). When combined with the device's low conduction losses, this provides designers the improved power density they need.
The FDMS86500L offers a better figure of merit (RDS(ON) * QG), delivering high efficiency and lower power dissipation in order to meet efficiency standards and regulations.
Other features of the FDMS86500L include next-generation enhanced body diode technology engineered for soft recovery, MSL1 robust package design, 100 percent UIL tested and is RoHS compliant.
The FDMS86500L is the first Fairchild device in a portfolio of new 60 V MOSFETs. The addition of these new 60 V devices enhances the company's mid-voltage MOSFET portfolio. Fairchild has the broadest MOSFET portfolio in the industry, allowing designers the ability to choose between multiple technologies and select the right MOSFET for their application. By understanding the demands for higher current DC-DC power supplies in smaller footprints for space constrained applications, as well as understanding customers and the markets they serve, Fairchild Semiconductor can tailor its combination of functional, process and packaging innovation into solutions that make a difference in electronic designs.
Samples of the FDMS86500L N-Channel, PowerTrench MOSFET are available now and they are priced at $0.90 in 1,000 quantity pieces.
More information about the FDMS86500L N-Channel, PowerTrench MOSFET at