600 V N-channel power MOSFET series adds 17 new devices offering on-resistance down to 39-mohms

October 22, 2012 // By Paul Buckley
Vishay Intertechnology, Inc., has added to the company's E Series of 600 V power MOSFETs with 17 new devices in eight packages that extend the on-resistance range of the family from 39 mΩ to 600 mΩ at 10 V.

The additions broaden the maximum current ratings from 7 A to 73 A.
 
Based on Vishay’s next generation of Super Junction technology, the new E Series MOSFETs allow the company to enter additional markets using power conversion technology, including lighting, adaptors, and high-power renewable systems.

The devices introduced today bring the total number of 600 V E Series MOSFETS to 27. All E Series devices offer ultra-low on-resistance and gate charge that translate into low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, uninterruptable power supplies (UPS), battery chargers, LED lighting, semiconductor capital equipment, adaptors, and solar inverters.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant.

Visit Vishay Intertechnology at www.vishay.com