650V AllGaN power ICs in production

February 08, 2017 // By Julien Happich
Navitas Semiconductor's iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon.

The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing integration of digital and analog circuits. Navitas GaN Power ICs with iDrive offer a 10-100x increase in system operating frequency combined with higher efficiencies to enable up to a 5x increase in power densities and 20% lower system costs.

“By integrating all gate-drive-related circuitry, virtually all frequency-related power losses are eliminated, opening the door to significant frequency and efficiency gains.  We anticipate a major upgrade cycle in mobile fast chargers, thin TVs, high-efficiency data centers, LED lighting, solar and electric vehicle markets as this new high-speed revolution in power electronics gets underway”, stated Navitas' CEO Gene Sheridan.  The NV6131, NV6105 and NV6115 come in a 5x6mm QFN package.

Visit Navitas Semiconductor at www.navitassemi.com