80-V half-bridge GaN FET module targets GaN power-conversion solutions

March 16, 2015 // By Paul Buckley
Texas Instruments has introduced the industry's first 80-V, 10-A integrated gallium nitride field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a half-bridge configuration – all in an easy-to-design quad flat no-leads (QFN) package.

The LMG5200 GaN FET power stage aims to help accelerate market adoption of next-generation GaN power-conversion solutions that provide increased power density and efficiency in space-constrained, high-frequency industrial and telecom applications.

Typically, designers who use GaN FETs that switch at high frequencies must be careful with board layout to avoid ringing and electromagnetic interference (EMI). TI’s LMG5200 dual 80-V power stage prototype eases this issue while increasing power-stage efficiency by reducing packaging parasitic inductances in the

critical gate-drive loop. The LMG5200 features advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz.

The easy-to-use 6-mm by 8-mm QFN package requires no underfill, which significantly simplifies manufacturing. The reduced footprint solidifies the value of GaN technology and will help increase adoption of GaN power designs in many new applications, ranging from new high-frequency wireless charging applications to 48-V telecom and industrial designs.

In addition to ordering the available LMG5200 evaluation module (EVM), designers can get started faster using PSpice and TINA-TI models for the LMG5200 to simulate the performance and switching frequency advantages of this technology.

Availability and Pricing

Prototype samples of the GaN power stage are available to purchase now in the TI Store. The LMG5200 is priced at $50 each with a maximum purchase of 10 units. The LMG5200 EVM is available for $299.