DC/DC converters target high voltage switching SiC MOSFET challenge

April 25, 2016 // By PAUL BUCKLEY
RECOM has introduced two 2 W DC/DC converter series designed to meet the high frequency and high voltage switching challenges posed by the next generation of power SiC MOSFETs
RECOM has introduced two 2 W DC/DC converter series designed to meet the high frequency and high voltage switching challenges posed by the next generation of power SiC MOSFETs.

High potentials between the control and power side of a SiC MOSFET application can wear down isolation barriers, eventually causing them to fail.

The RxxP22005D and RKZ-xx2005D series come with 3 kVDC, 4 kVDC, and even 5.2 kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. Switching SiC MOSFETs requires turn-on and turn-off voltages which are not common for other IGBT or MOSFET applications. The RxxP22005D and RKZ-xx2005D series are available with input voltages of 5 V, 12 V, 15 V or 24 V and feature asymmetric outputs of +20 V and -5 V to efficiently and effectively switch the SiC MOSFET.
 
The converters come equipped with an ultra-low parasitic capacitance and power sharing capabilities, and they are all fully compliant to UL-60950-1, RoHS2, and REACH. High operating temperatures coupled with high-frequency switching make the SiC MOSFET harsh for power supplies.

www.recom-electronic.com