Compared to previous technologies it is offering size, weight and power improvements for systems such as high-throughput satellites, where the cost-per-bit-ratio can be significantly reduced. The 100 V, 35 A MOSFETs are aimed at mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching designs.
Developed by the Infineon IR HiRel business, the IRHNJ9A7130 and IRHNJ9A3130 are fully characterized for TID (total ionizing dose) immunity to radiation of 100 kRads and 300 kRads respectively. An R DS(on) of 25 mΩ (typical) is 33 percent lower than the previous device generation. In combination with increased drain current capability (35 A vs. 22 A), this allows the MOSFETs to provide increased power density and reduced power losses in switching applications.
The MOSFETs have improved Single Event Effect (SEE) immunity and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90 MeV/(mg/cm²); at least 10 percent higher than previous generations. Both of the new devices are packaged in a hermetically sealed, lightweight, surface mount ceramic package (SMD-0.5) measuring just 10.28 mm x 7.64 mm x 3.12 mm. They are also available in bare die form.
Samples and production quantities of both the IRHNJ9A7130 and IRHNJ9A3130 are available.
More information is available at www.infineon.com/R9-space-grade-MOSFET.