E.U. tackles III-V on CMOS

March 07, 2016 // By R. Colin Johnson
Integrating III-V transistor channels on standard complementary metal oxide semiconductors (CMOS) is the goal of a new three-year, $4.7 million program in the European Union (E.U.) called "Integration of III-V Nanowire Semiconductors for Next Generation High Performance CMOS SoC Technologies" (Insight).

The ultimate aim is to meet the specifications of future 5G and radar systems aiming for wider bandwidth and higher-resolution images, respectively. Besides IBM (Switzerland), the program will be conducted by Fraunhofer IAF (Germany), LETI (France), Lund University (Sweden), University of Glasgow (UK) and the Tyndall National Institute (Ireland).