Fairchild cuts IGBT switching losses by 30 percent

May 19, 2015 // By Paul Buckley
Fairchild is claiming to have slashed energy loss by 30 percent for the company's 4th generation 650 V and 1200 V IGBT devices and is demonstrating test results of several applications at this week's PCIM Europe 2015 event in Nuremberg, Germany.

Using a novel design approach tailored for high and medium/speed switching applications in industrial and automotive markets, Fairchild claims to be able to deliver industry-leading levels of performance with strong latch up immunity for superior ruggedness and reliability.

Fairchild's new approach involves what the company claims is extremely high electron injection efficiency that is enhanced by a fine cell pitch design and hole carrier injection restricted by a new buffer structure which achieves an improved trade off performance as well as strong latch up immunity.

A self-balancing cell build uses a novel self-aligned contact technology which optimizes the critical dimension of active cell design for the enhanced on-state performance, as well as to maximize the latch up current capability.

Additionally, multiple buffer layers were adopted for the anode side of the IGBT in order to effectively control the minority carrier injection during the on state, and to completely block the electric field during the off state.