GaN matched power transistor family targets pulsed-radar applications

June 20, 2012 // By Paul Buckley
RF Micro Devices, Inc. has released a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 claims to deliver superior performance compared with competing silicon power technologies.

RFMD’s RFHA1025 complements the recently released 380-watt RF3928B, the highest output power S-Band device in RFMD’s matched power transistor family. RFMD is expanding its portfolio of GaN-based power amplifier transistor products across bands, increasing its leadership position in the radar market.

RFMD's GaN matched power transistors extend range, reduce size and weight, and improve overall ruggedness in new and existing radar architectures. The RFHA1025 operates over a broad frequency range (0.96-1.2 GHz) and delivers 280-watt pulsed power, high gain >14 dB, and high peak efficiency of >55%. Additionally, the RFHA1025 incorporates internal matching to simplify and shrink designers’ circuits. Packaged in a hermetic, flanged ceramic package, the RFHA1025 uses RFMD's advanced heat sink and power dissipation technologies, delivering excellent thermal stability and conductivity. RFMD’s RF393x unmatched power transistors (UPT) can be used as drivers to the RFHA1025.


Availability

Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels.

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