GaN for power to show extended market boom

September 08, 2015 // By Peter Clarke
Specialist companies will benefit from a forthcoming boom in gallium nitride (GaN) for power semiconductors, but will find themselves under competitive or acquisitive pressure from larger players such as Infineon/International Rectifier, according to Yole Developpement.

In 2015 the annual market for gallium nitride (GaN) for power applications was estimated at $10 million, by Yole. But over the five years 2016 to 2020 it will show a compound annual growth rate of 93 percent to reach a value of more than $300 million in 2020, the market research firm estimates.

The main companies selling power GaN semiconductor components today are: Infineon/International Rectifier, Efficient Power Conversion, GaN Systems and Transphorm, Yole said.

Consolidation pressure is already there as evidenced by the recent acquisition of International Rectifier by Infineon and licensing agreements between Infineon and Panasonic and between Transphorm and Furukawa and a cooperation between Transphorm and Fujitsu on manufacturing.

International Rectifier and therefore Infineon has the best GaN for power patent portfolio and the biggest challenger is Transphorm, according to Nicolas Baron, CEO of KnowMade, a partner with Yole in analyzing the GaN power market. However, this IP leadership position could change since newcomers like Transphorm, Fujitsu and Mitsubishi Electric are becoming major forces and may reshape the landscape. By giving Transphorm exclusive licensing rights on its GaN patent portfolio, Furukawa Electric has found a strategic partner to bring its technology to market.
 

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www.yole.fr

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