Gate driver chip prevents incoming reverse current

February 17, 2016 // By Christoph Hammerschmidt
Toshiba Electronics Europe’s new TPD7104AF high-side N-channel Power MOSFET gate driver can be controlled by 3.3-logic input. It has a feature to prevent the reverse current flow to itself in case of reverse battery situation.

The TPD7104AF is designed for automotive applications, such as power connect/disconnect switches in start/stop systems, semiconductor relays in ECUs (Electronic Control Units) and junction boxes in 12V battery system.

By combining a TPD7104AF gate driver and an N-channel power MOSFET, a semiconductor relay can be easily created thanks to its built-in charge pump. By adding a shunt resistor, the short-circuit protection and diagnosis functions can also be utilised. Other features of the new driver chip include short-circuit protection and diagnosis functions. The TPD7104AF also boasts a very low output leak current for reverse battery condition with IREV=-1uA (min) (@ Tj=25°C). Housed in a compact PS-8 package, the device measures just 2.8mm x 2.9mm.

Further information: www.toshiba.semicon-storage.com/eu/company/news.html