Globalfoundries offers embedded MRAM on 22nm FDSOI

September 15, 2016 // By Peter Clarke
Globalfoundries Inc. (Milpitas, Calif.) has begun to offer MRAM as a non-volatile memory option on 22FDX, its 22nm FDSOI manufacturing process.

Globalfoundries' 22FDX eMRAM is scheduled to be available for customer prototyping in 2017, with volume production in 2018. The technology scales beyond 22nm and is expected to be available on both FinFET and future FDX manufacturing platforms.

The introduction of embedded MRAM is a result of Globalfoundries' multi-year partnership with MRAM pioneer, Everspin Technologies Inc. (Chandler, Ariz.). The partnership has delivered the world’s highest density ST-MRAM, a 256Mbit DDR3 perpendicular magnetic tunnel junction (pMTJ) product, which is now sampling (see Everspin samples 256Mbit MRAMs, 1Gbit coming ).

Globalfoundries claims that when Everspin's MRAM technology is embedded in chips it provides access to 1,000 times faster write speeds and 1,000 times more cycling endurance than currently deployed non-volatile memories. 22FDX eMRAM also features the ability to retain data through 260°C solder reflow, industrial temperature operation, while maintaining an industry-leading eMRAM bit-cell size, according to Globalfoundries.

The ability to store both code and data on chip allows developers to power down systems that must operate intermittently and wake up them up in the same state which can provide a benefit for power saving. The power efficiency of FDSOI together with the availability of RF intellectual property added to non-volatile memory is a combination suitable for battery-powered IoT products, such as wireless sensor nodes, and automotive microcontrollers, the company said.

Related links and articles:

www.globalfoundries.com

www.everspin.com

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