The IDT F1150 and F1152 are low-power, low-distortion dual 1700 to 2200 MHz RF to IF mixers with ultra linear (+42 dBm) third-order intercept point (IP3O) for superb intermodulation rejection, making them ideal for multi-carrier, multi-mode cellular systems found in 4G wireless base stations.
The mixers reduce power consumption by over 40 percent versus standard mixers, significantly reducing heat dissipation and easing heat-sinking requirements on the radio card – a critical factor for today’s densely packed enclosures. In addition, the devices improve IM3 distortion by over 15 dB for better signal-to-noise ratio (SNR), allowing customers to improve performance with a higher front-end gain.
The IDT F1150 and F1152 complement the recently announced IDT F1200 low-noise digitally controlled IF variable gain amplifier (VGA) in IDT’s growing portfolio of RF signal path products.
The IDT F1150 (high-side injection) and F1152 (low-side injection) are currently sampling to qualified customers and are available in a 36-pin 6x6 mm QFN package.
For further information: www.IDT.com.