The enhancement-mode monolithic GaN transistor half bridge integrates two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system.
The EPC2106 has a voltage rating of 100 V with a typical RDS(on) of 55 mΩ, output capacitance less than 600 pF, zero reverse recovery (QRR), and a maximum pulsed drain current of 18 A. The low on-resistance and capacitance of GaN enables high efficiency and significantly reduces distortion in Class-D systems. It comes in a 1.35x1.35mm chip-scale package for improved switching speed and thermal performance for increased power density. The low on-resistance and capacitance of GaN enables high efficiency and significantly reduces distortion in Class-D systems.
Visit Efficient Power Conversion (EPC) at www.epc-co.com
Efficient Power Conversion: Joe Engle tel: 310.986.0350310.986.0350 email: firstname.lastname@example.org