NextPowerS3 is the industry’s first MOSFET to deliver the high frequency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 30 V is suitable for a variety of applications, including high efficiency power supplies for telecoms and cloud computing, high performance portable computing and battery-powered motor control, such as rechargeable power tools.
The trend in recent years has been to create faster and faster switching MOSFETs in an effort to reduce switching losses and increase the efficiency of switch mode power supply (SMPS) designs. However, faster switching on its own can generate problems in terms of switch node voltage spikes, coupled gate glitches and the potential for shoot-through, raising EMI and reliability concerns.
One popular solution has been to integrate Schottky and Schottky-like diodes into MOSFET structures. However, Schottky diodes introduce high leakage currents, especially at elevated temperatures, which impact efficiency, battery life and the ability to screen for defectivity in the manufacturing process. Combining super-fast switching with soft recovery, NXP’s NextPowerS3 range addresses each of these concerns, delivering increased efficiency and higher power density, while keeping voltage spikes under control and limiting leakage current to less than 1 µA.
“Everyone knows Schottky diodes are leaky, especially when they are hot,” said Chris Boyce, head of MOSFET marketing and business development for NXP Semiconductors. “And whilst it may be possible to design around leakage of a milliamp or two, our biggest concern is quality. We use leakage current as an important screen in our drive for zero-defect manufacturing. Trying to identify problem devices in a population with inherently high leakage is like trying to hear a whisper during a fire alarm. The sub-microamp leakage of NextPowerS3 means that NXP is not faced with this problem.”
More information about the NextPower S3 MOSFETs at