The new photo detector, according to the research team around Sascha Mühlbrandt the smallest worldwide for optical data transmission, permit a significant performance increase of optical communications systems, because they can be integrated on optical semiconductors in large quantities. In their experiments, the researchers reached a throughput up to 40 Gbps – enough to transfer the entire content of a video DVD within a fraction of a second, explains Sascha Mühlbrandt who carried out the related research activities at the Institutes for Microstructure Technology and Institute for Photonics and Quantum Electronics, both subsidiaries of the KIT.
Mühlbrandt is convinced that the throughput of still has upside potential. “This plasmonic internal photoemission detector (PIPED) is the smallest detector ever to reach this data rate”, the researcher said. The devices is 100 times smaller than a conventional photo detector.
A benefit of this extremely small size lies in the possibility that the photo detector can be integrated along with downstream preprocessing circuitry on a single CMOS chip. The introduction of novel plasmonic components for high-speed data exchange between integrated circuits in computers opens the possibility to combine the advantages of electronic and optical components at the same or higher data throughput as with electronic-only components, said project coordinator Manfred Kohl from the KIT Institute for Microstructure Technology.
The detector has been developed within the project NAVOLCHI (Nano Scale Disruptive Silicon-Plasmonic Platform for Chip-to-Chip Interconnection which has been funded from the 7th EU Research Frame Program.
To combine the optics and electronics within very small spaces, the photo detector makes use of surface plasmon polaritons – highly concentrated electromagnetic waves on metallic-dielectric boundary surfaces. “This new class of plasmonic converters is based on the driect signal conversion at metallic surfaces at optical wavelengths, known as photo emission. To efficiently control the absorption of light and its conversion into electric signals, the researchers generated charge carriers in a titanium-silicon junction and recombined in another gold-silicon junction. The high speed of the detector is achieved through its specific geometry – between the two metal-silicon junctions there is a distance of less than 100 nanometers.