NXP unveils new plastic packages for RF power transistors

June 06, 2011 // By Paul Buckley
NXP Semiconductors N.V. has launched a complete line of overmolded plastic (OMP) RF power devices with peak powers ranging from 2.5 to 200 W. This range of OMP devices has been introduced as a complement to NXP’s extensive range of products in ceramic packages, providing customers a choice for more cost-sensitive applications, while maintaining the required level of RF performance.

NXP's OMP roadmap covers all the high-volume frequency ranges and applications: 10- to 500-MHz ISM, 470- to 860-MHz broadcast, 700- to 2200-MHz GSM, WCDMA telecom, 2300- to 2700-MHz LTE telecom, 2.45 GHz ISM, and even products for the 2700- to 3500-MHz S-band. Product types will extend to all existing categories: discrete pre-drivers (2.5 to 10 W), drivers (20 to 45 W), MMICs (20 to 60 W), finals (50 to 200 W) and integrated Doherty devices (50 – 110 W).

“Compared to ceramic, overmolded plastic can significantly reduce the overall BOM cost by 20 percent, offering customers a clear choice in cost versus performance. As a complement to our existing product portfolio, the new OMP RF power devices give design engineers added flexibility and demonstrate our ongoing commitment to RF power,” said Mark Murphy, director of RF power products, NXP Semiconductors.

OMP products up to 10 W will utilize NXP’s existing IC packages, with new footprint packages developed for higher powers. For customers using full surface mount assembly, gull-wing versions will be available in addition to traditional straight-lead versions. A limited selection of devices is available today as engineering samples, with volume production scheduled to start in Q4 2011.

For further information: www.nxp.com.