The 6.5kV, 6.8kV and 7.2kV devices use bonded die technology and IXYS UK’s latest optimised package designs to maximise power density and performance.
With the silicon die directly bonded to a metallic disc, the new 56mm die devices are constructed using IXYS UK’s advanced processing and the device is packaged in an industry standard hermetic outline. The structure offers both optimised transient thermal conditions and overall robustness. The thermal capacity of the metal disc and its direct fusion to the silicon enhances performance and presents excellent transient thermal and surge current ratings. The average current rating of the new devices is 1975 A (with a case temperature 55°C) and a surge rating of 20,000 A.
“The new voltage class extends the range of diodes offered in this package size, which now covers voltages from 200V to 7200V. This is the first of a full range of rectifier diodes in this voltage class. Further device sizes and current ratings are planned for launch over the next 12 months,” said Frank Wakeman, IXYS UK’s Marketing and Technical Support Manager.
The devices are encapsulated in an industry standard 26mm thick package with an electrode diameter of 50mm and overall diameter of 74mm. Designations are: W1975MC650 for the 6500V device, W1975MC680 for the 6800V device and W1975MC720 for the 7200V device. Typical applications include traction rectifiers and substations, front end rectification for medium voltage drives and all rectifier applications requiring devices in the higher voltage ratings. The new devices are also suitable for applications with operating voltages which require the use of several devices in series, where the higher unit voltage of the device may offer the opportunity to reduce the number of series elements required for a given system voltage.
For data sheet or more information about future products, please go to the IXYS UK website at www.ixysuk.com