Roll-to-roll flexible electronics to hit 100GHz?

April 21, 2016 // By Julien Happich
Researchers from the University of Wisconsin Madison have leveraged the high carrier mobility of flexible silicon nanomembranes (NM) with the scalability of nanoimprinting lithography (NIL) to produce thin-film flexible RF transistors capable of operating at 38GHz.

According to their simulations, their manufacturing strategy could yield 100 GHz-capable thin flexible RF transistors to be manufactured at low cost and low temperature on large rolls of PET.

Their paper "Fast Flexible Transistors with a Nanotrench Structure" published in the journal Scientific Reports details how they overcome the limitations of conventional lithography.

Rather than try to dope selectively a silicon substrate to pattern transistors, the researchers indiscriminately doped a whole silicon nanomembrane (created from a silicon-on-insulator (SOI) wafer, hence keeping the superior charge carrier mobility of bulk silicon versus typically low-mobility organic materials.

They then used electron-beam lithography to carve out a nano-imprinting mold which they use to imprint an etching mask pattern through a photoresist layer, subsequently used to etch a deep nano trench in the Si NM (100nm wide by 250nm deep). After depositing source and drain electrodes and undercutting the buried oxide to release the Si NM, the active nanomembrane is flip transferred onto an adhesive coated PET substrate. Further dry etching defines the perimeter of the active region, then an Al2O3 gate dielectric and gold gate electrodes are deposited above the 100nm trench to finalise the transistor – see figure 1.


Fig. 1: Comparison of the device structures (cross-sectional view) and fabrication processes between (a) 3-D nano trench Si NM flexible RF TFTs, and (b) conventional 2-D TFTs. The effective channel lengths Lch are marked in red in (a3,b3). The smallest Lch of the nano trench TFT can reach down to 50 nm via NIL and that of the conventional TFT can only reach down to about 1.5 μm. (a1) Blanket phosphorous ion implantation and thermal anneal. (a2) Nano trench formation via nanoimprint. (a3) Final structure of nano trench TFT where the channel length Lch is defined by nanoimprint. (b1) Photolithography to define S/D regions for ion implantation. (b2) Selective ion implantation and thermal anneal. (b3) Final structure of conventional TFT where the channel length Lch is limited by gate electrode and dopant out-diffusion during ion implantation and thermal anneal. Source University of Wisconsin Madison.

Remarkably, all of the device fabrication processes were carried out at temperatures lower than 150°C (except for the first doping and recrystallization steps performed in a blanket fashion before releasing the Si NM from SOI).