Russian Flexible Electronics Center to pilot oTFT and IGZO TFTs for early prototypes

June 10, 2016 // By Julien Happich
Nanotechnology center Technospark (Moscow, Troitsk) announced plans to combine two thin-film transistor technologies based on metal-oxide and organic materials in one low-volume pilot-line facility in Troitsk.

There, the Russian Flexible Electronics Centre (RFEC) aims to establish a platform for prototyping and small volume manufacturing of new products based on both organic thin-film transistors (TFTs) and indium–gallium–zinc–oxide (IGZO) flexible TFTs.


oTFT array on a flexible substrate, courtesy of FlexEnable.

In partnership with leading European companies imec, Holst Centre, and FlexEnable; and with access to cutting-edge materials, equipment and processes, RFEC will focus on the customized development of new flexible electronics components including displays, sensors, NFC and RFID tags, for end-user companies, high-quality prototyping and small volume manufacturing.

"We are filling the gap in the flexible electronics supply chain, taking the prototyping niche between R&D and volume production. To ensure the seamless volume scaling between prototyping and volume manufacturing, the infrastructure at RFEC will be fully compatible with existing mass production facilities. The aim is to integrate it into the global supply chain”, said Denis Kovalevich, General Director of TechnoSpark in a company statement.

Visit TechnoSpark at http://technospark.ru/en/  

 

Related articles:

Flexible electronics scale up to billions with fab-in-a-box

Roll-to-roll flexible electronics to hit 100GHz?

European pilot line to extend flexible OLED commercial reach

Organic and printed electronics industry is hiring, says OE-A

European plastic electronics industry flexes its muscles