SuperFET III MOSFETs claim efficiency and reliability gains

September 22, 2016 // By Graham Prophet
Fairchild Semiconductor, now part of ON Semiconductor, has added the SuperFET III family of 650V N-channel MOSFETs, citing performance advances in power density, system efficiency and reliability for telecom, server, electric vehicle (EV) charger and solar products.

SuperFET III technology claims the lowest Rdson in any easy drive version of a Super Junction MOSFET, delivering best-in-class efficiency. It achieves this thanks to advanced charge balancing technology which also enables 44& lower Rdson than its SuperFET II predecessors, in the same package size. A key factor in the SuperFET III’s exceptional ruggedness and reliability is its optimized body diode and three times better single pulse Avalanche Energy (EAS) performance than its closest competitor.

The lower peak drain-source voltage during turn off of the 650V SuperFET III improves system reliability in low temperature operation because the breakdown voltage naturally drops by 5% at -25℃ junction temperature than room temperature and the peak drain-source voltage becomes higher at low temperature.

These reliability advantages are particularly important for industrial applications such as solar inverters, Uninterruptable Power Supplies (UPS) and EV chargers which must be capable of enduring higher or lower external ambient temperatures.

The SuperFET III MOSFET family is available today in multiple package and parametric options:





Device Number

RDS(on) (max) (mΩ)  @ VGS=10V

Qg (Typ) (nC)  @ VGS=10V

Package

FCH023N65S3L4

23

222

TO-247 4L

FCH023N65S3

23

222

TO-247 3L

FCH067N65S3

67

78

TO-247 3L

FCP067N65S3

67

78

TO-220 3L

FCPF067N65S3

67

78

TO-220F 3L

FCB070N65S3

70

78

TO-263 2L (D2-PAK)

 

Fairchild; fairchildsemi.com/superfet